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| SMD Type IC MOSFET MOS Field Effect Transistor 2SK3918 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features Low on-state resistance +0.2 9.70-0.2 +0.1 0.80-0.1 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 5 V drive available +0.15 0.50-0.15 Low Ciss: Ciss = 1300 pF TYP. 0.127 max +0.15 5.55-0.15 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 25 20 48 192 1.0 29 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ton tr toff tf QG QGS QGD VF(S-D) trr Qrr VDD = 20V VGS = 10 V ID =48A IF = 48A, VGS = 0 V IF = 48 A, VGS = 0 V di/dt = 100 A/ is ID=24A,VGS(on)=10V,RG=10 ,VDD=12.5V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=25V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=12A VGS=10V,ID=24A VGS=5.0V,ID=12A 2.5 6 2.5 12 5.9 11 1300 310 220 13 14 38 14 28 5 10 0.98 27 15 7.5 22.2 Min Typ Max 10 100 3.0 Unit A nA V S mU mU pF pF pF ns ns ns ns nC nC nC V ns nC 3.80 RDS(on)1 = 7.5 m MAX. (VGS = 10 V, ID = 24 A) +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 www.kexin.com.cn 1 |
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